Semiconductor element

ABSTRACT

A semiconductor element includes a first coil substantially located at a first plane; a second coil substantially located at the first plane; a connecting section that connects the first coil and the second coil; a third coil substantially located at a second plane different from the first plane; and a fourth coil substantially located at the second plane. The third coil and the first coil are connected through a through structure, and the fourth coil and the second coil are connected through a through structure. The third coil and the fourth are not directly connected.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The present invention relates to a semiconductor element, especially toa semiconductor element that can be used as an integrated inductor or anintegrated transformer.

2. Description of Related Art

Inductors and transformers are important elements in radio frequencyintegrated circuits to implement single-ended to differential signalconversion, signal coupling and impedance matching. As System-on-chips(SoC) become the mainstream of integrated circuits, integrated inductorsand integrated transformers are gradually substituted for conventionaldiscrete elements and are commonly applied to radio frequency integratedcircuits. However, inductors and transformers in integrated circuitsoften take up large areas; therefore, it becomes an important issue toreduce the areas of inductors and transformers in integrated circuitswithout degrading element performances, such as inductance, qualityfactor (Q), and coupling coefficient (K).

FIG. 1 illustrates a structure of a conventional 8-shaped integratedinductor. An 8-shaped integrated inductor 100 includes a spiral coil 110and a spiral coil 120. The spiral coil 110 (120) includes a metalsegment 112 (122) and a metal segment 114 (124). The metal segment 112(122) and the metal segment 114 (124) are connected by throughstructures at through positions. The through structures can be viastructures or a via array. In operation, signals are inputted at oneconnecting terminal 111 (or 121) of the 8-shaped integrated inductor 100and outputted at the other connecting terminal 121 (or 111). The8-shaped integrated inductor 100 has an obvious drawback, that thespiral coil 110 or the spiral coil 120 itself has unsatisfactorysymmetry, causing poor performances of the quality factor and theinductance of the 8-shaped integrated inductor 100. Moreover, the twoconnecting terminals 111 and 121 of the 8-shaped integrated inductor 100are distant from each other, such that the connection with differentialelements in an integrated circuit becomes difficult (which becomes evenmore apparent as the numbers of turns of the spiral coils get greater).

SUMMARY OF THE INVENTION

In view of the issues of the prior art, an object of this invention isto provide a semiconductor element to improve the performance of anintegrated inductor and an integrated transformer.

The present invention discloses a semiconductor element comprising: afirst spiral coil, a second spiral coil, a connecting section, and aguide segment section. The first spiral coil is formed with a first endand a second end. The second spiral coil and the first spiral coil arelocated in substantially a same metal layer. The connecting sectionconnects the first spiral coil and the second spiral coil. One end ofthe guide segment section is connected to the first end and the secondend. A region surrounded by the second spiral coil and at least one ofthe guide segment section and the connecting section partially overlap.

The present invention also discloses a semiconductor element comprisinga first coil, a second coil, a connecting section, a third coil, and afourth coil. The first coil is substantially located at a first plane.The second coil is substantially located at the first plane. Theconnecting section connects the first coil and the second coil. Thethird coil is substantially located at a second plane different from thefirst plane. The fourth coil is substantially located at the secondplane. The third coil and the first coil are connected through a throughstructure. The fourth coil and the second coil are connected through athrough structure. The third coil and the fourth coil are not directlyconnected.

In comparison with the prior art, the semiconductor element disclosed inthe present invention is highly symmetric, which is advantageous toimproving the performance of the elements.

These and other objectives of the present invention no doubt becomeobvious to those of ordinary skill in the art after reading thefollowing detailed description of the preferred embodiments withreference to the various figures and drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a structure of a conventional 8-shaped integratedinductor.

FIG. 2A illustrates a structure of a semiconductor element according toan embodiment of the present invention.

FIG. 2B illustrates shows the spiral coil 210, the spiral coil 220 andthe connecting section 230 individually.

FIG. 3 illustrates a structure of a semiconductor element according toanother embodiment of the present invention.

FIG. 4 illustrates a structure of a semiconductor element according toanother embodiment of the present invention.

FIG. 5 illustrates a structure of a semiconductor element according toanother embodiment of the present invention.

FIG. 6 illustrates a structure of a semiconductor element according toanother embodiment of the present invention.

FIG. 7A illustrates a structure of a semiconductor element 700 accordingto another embodiment of the present invention.

FIG. 7B illustrates the coils of the semiconductor element 700 which arelocated in the lower metal layer and include a coil 710 and a coil 720.

FIG. 7C illustrates coils of the semiconductor element 700 which arelocated in the upper metal layer and include a coil 715 and a coil 725.

DETAILED DESCRIPTION OF THE EMBODIMENTS

The following description is written by referring to terms of thistechnical field. If any term is defined in this specification, such termshould be explained accordingly. In addition, the connection betweenobjects or events in the below-described embodiments can be direct orindirect provided that these embodiments are practicable under suchconnection. Said “indirect” means that an intermediate object or aphysical space exists between the objects, or an intermediate event or atime interval exists between the events.

FIG. 2A shows a structure of a semiconductor element according to anembodiment of the present invention. A semiconductor element 200includes two spiral coils 210 and 220. The spiral coils 210 and 220 areconnected by a connecting section 230. The metal segments 250 a and 250b are guide segments of the semiconductor element 200 and thus form aguide segment section of the semiconductor element 200. An end of themetal segment 250 a is connected to an end 212 a of the spiral coil 210.An end of the metal segment 250 b is connected to one other end 212 b ofthe spiral coil 210. A center tap 240 of the semiconductor element 200is connected to the spiral coil 220, and is fabricated in another metallayer (a metal layer different from the metal layer shaded in gray andthe metal layer shaded by slanted lines). The center tap 240 can beregarded as another guide segment of the semiconductor element 200.Metal segments in different metal layers are connected by a throughstructures, which can be a via structure or a via array.

FIG. 2B shows the spiral coil 210, the spiral coil 220 and theconnecting section 230 individually to illustrate the connections amongthese three components in a detailed manner. The ends 212 a and 212 b ofthe spiral coil 210 are respectively connected to the metal segments 250a and 250 b. The spiral coil 210 includes metal segments 211 a-211 d.The metal segment 211 b is fabricated in an upper metal layer (shaded byslanted lines), while the remaining metal segments are fabricated in alower metal layer (shaded in gray). The spiral coil 210 is a two-turnspiral structure, of which the inner turn is located in a regionsurrounded by the outer turn. The inner turn of the spiral coil 210includes the metal segment 211 a and a lower part of the metal segment211 d. The outer turn of the spiral coil 210 includes an upper part ofthe metal segment 211 d and the metal segment 211 c. Because the metalsegment 211 b takes up only a small portion of the spiral coil 210, thespiral coil 210 is located in substantially the same metal layer. Inother words, the spiral coil 210 is located at substantially the sameplane. Similarly, the spiral coil 220 includes metal segments 221 a-221d. The metal segment 221 c is fabricated in the upper metal layer, whilethe remaining metal segments are fabricated in the lower metal layer.The spiral coil 220 is a two-turn spiral structure, of which the innerturn is located in a region surrounded by the outer turn. The inner turnof the spiral coil 220 includes the metal segment 221 b and a lower partof the metal segment 221 a. The outer turn of the spiral coil 220includes an upper part of the metal segment 221 a and the metal segment221 d. Similarly, the spiral coil 220 is located in substantially thesame metal layer. In other words, the spiral coil 220 is located atsubstantially the same plane. The spiral coil 220 is connected to thecenter tap 240 via the connecting area 222 c. The connecting area 222 c,located at the inner turn of the spiral coil 220, is an area where themetal segment 221 a and the metal segment 221 b are connected.

The connecting section 230 includes a connecting segment 231 a and aconnecting segment 231 b. Two ends of the connecting segment 231 a arerespectively connected to an end 212 c of the spiral coil 210 and an end222 b of the spiral coil 220. Two ends of the connecting segment 231 bare respectively connected to an end 212 d of the spiral coil 210 and anend 222 a of the spiral coil 220.

Please refer to FIG. 2A again. Connected to the spiral coil 210, theguide segment section of the semiconductor element 200 partiallyoverlaps a region surrounded by the spiral coil 220 but does notpartially overlap a region surrounded by an inner turn of the spiralcoil 210. The center tap 240 is connected to an inner turn of the spiralcoil 220. In this embodiment, the center tap 240 extends towards theright-hand side of FIG. 2A, partially overlapping a region surrounded bythe spiral coil 220. In a different embodiment, the center tap 240 mayextend towards the left-hand side of this figure, partially overlappinga region surrounded by the spiral coil 210.

FIG. 3 shows a structure of a semiconductor element according to anotherembodiment of the present invention. The semiconductor element 300includes two spiral coils 310 and 320. The spiral coils 310 and 320 areconnected by a connecting section 330. Similar to the connecting section230, the connecting section 330 is formed by two connecting segments,and the details are thus omitted herein for brevity. The metal segments350 a, 350 b, 350 c and 350 d are guide segments of the semiconductorelement 300 and thus form a guide segment section of the semiconductorelement 300. The metal segments 350 a and 350 c are connected to thespiral coil 310 via the end 312 a. The metal segments 350 b and 350 dare connected to the spiral coil 310 via the end 312 b. The center tapof the semiconductor element 300 (not shown) is connected to the spiralcoil 320 through the connecting area 322, and can be regarded as anotherguide segment of the semiconductor element 300. The center tap of thespiral coil 320 may extend towards the right-hand side of the figure,partially overlapping a region surrounded by the spiral coil 320. Inanother embodiment, the center tap may extend towards the left-hand sideof the figure, partially overlapping a region surrounded by the spiralcoil 310.

The guide segment section of the semiconductor element 300 extendstowards the left-hand side and the right-hand side of the figure, suchthat the guide segment section partially overlaps a region surrounded bythe spiral coil 310 and a region surrounded by the spiral coil 320. Theguide segment section forms an input port or an output port on each sideof the semiconductor element 300, which enables the semiconductorelement 300 to be connected to its peripheral components in a moreflexible manner.

FIG. 4 shows a structure of a semiconductor element according to anotherembodiment of the present invention. The semiconductor element 400includes two spiral coils 410 and 420. The connecting segments 430 a and430 b form a connecting section of the semiconductor element 400. Thespiral coils 410 and 420 are connected by the connecting section. Morespecifically, the connecting segment 430 a connects the end 412 c of thespiral coil 410 and the end 422 a of the spiral coil 420, and theconnecting segment 430 b connects the end 412 d of the spiral coil 410and the end 422 b of the spiral coil 420. The metal segments 450 a and450 b are guide segments of the semiconductor element 400 and thus forma guide segment section of the semiconductor element 400. An end of themetal segment 450 a is connected to one end 412 a of the spiral coil410, and an end of the metal segment 450 b is connected to the other end412 b of the spiral coil 410. The center tap of the semiconductorelement 400 (not shown) is connected to the spiral coil 420 via theconnecting area 422 c and can be regarded as another guide segment ofthe semiconductor element 400. The center tap of the semiconductorelement 400 may extend towards the right-hand side of the figure withoutoverlapping the regions surrounded by the spiral coils 410 and 420. Inanother embodiment, the center tap may extend towards the left-hand sideof the figure, partially overlapping regions surrounded by the spiralcoils 410 and 420.

The connecting section of the semiconductor element 400 connects anouter turn of the spiral coil 410 and an outer turn of the spiral coil420, and partially overlaps a region surrounded by the spiral coil 420.In the embodiment shown in FIG. 4, a total number of turns of the spiralcoil 410 is even, and therefore the guide segment section of thesemiconductor element 400 partially overlaps a region surrounded by thespiral coil 410. In another embodiment where a total number of turns ofthe spiral coil 410 is odd (e.g., three turns, five turn, seven turns,etc.), the guide segment section of the semiconductor element 400 doesnot overlap a region surrounded by the inner turn of the spiral coil410.

FIG. 5 shows a structure of a semiconductor element according to anotherembodiment of the present invention. The semiconductor element 500includes two spiral coils 510 and 520. The connecting segments 530 a and530 b form a connecting section of the semiconductor element 500. Thespiral coils 510 and 520 are connected by the connecting section. Morespecifically, the connecting segment 530 a connects an end 512 c of thespiral coil 510 and an end 522 a of the spiral coil 520, and theconnecting segment 530 b connects an end 512 d of the spiral coil 510and an end 522 b of the spiral coil 520. The metal segments 550 a and550 b are guide segments of the semiconductor element 500 and thus forma guide segment section of the semiconductor element 500. An end of themetal segment 550 a is connected to one end 512 a of the spiral coil510, and an end of the metal segment 550 b is connected to one other end512 b of the spiral coil 510. The center tap of the semiconductorelement 500 (not shown) is connected to the spiral coil 510 through theconnecting area 512 e, and can be regarded as another guide segment ofthe semiconductor element 500. The center tap of the semiconductorelement 500 may extend towards the left-hand side of the figure withoutoverlapping regions surrounded by the spiral coils 510 and 520. Inanother embodiment, the center tap may extend towards the right-handside of the figure, partially overlapping regions surrounded by thespiral coils 510 and 520.

The spiral coils 510 and 520 are both three-turn spiral structures. Theends 512 a and 512 b are located at the innermost turn of the spiralcoil 510, and the ends 512 c and 512 d are located at a middle turn ofthe spiral coil 510. The ends 522 a and 522 b are located at theinnermost turn of the spiral coil 520. The connecting section of thesemiconductor element 500 connects the middle turn of the spiral coil510 and the innermost turn of the spiral coil 520, and partiallyoverlaps a region surrounded by the spiral coil 520. In the embodimentshown in FIG. 5, a total number of turns of the spiral coil 510 is odd,and therefore the guide segment section of the semiconductor element 500partially overlaps a region surrounded by the spiral coil 510. Inanother embodiment where a total number of turns of the spiral coil 510is even (e.g., two turns, four turns, six turns, etc.), the guidesegment section of the semiconductor element 500 does not overlap aregion surrounded by the inner turn of the spiral coil 510.

FIG. 6 shows a structure of a semiconductor element according to anotherembodiment of the present invention. The semiconductor element 600includes two spiral coils 610 and 620. The connecting segments 630 a and630 b form a connecting section of the semiconductor element 600. Thespiral coils 610 and 620 are connected by the connecting section. Morespecifically, the connecting segment 630 a connects an end 612 c of thespiral coil 610 and an end 622 a of the spiral coil 620, and theconnecting segment 630 b connects an end 612 d of the spiral coil 610and an end 622 b of the spiral coil 620. The metal segments 650 a and650 b are guide segments of the semiconductor element 600 and thus forma guide segment section of the semiconductor element 600. An end of themetal segment 650 a is connected to one end 612 a of the spiral coil610, and an end of metal segment 650 b is connected to one other end 612b of the spiral coil 610. The center tap of the semiconductor element600 (not shown) is connected to the spiral coil 620 through theconnecting area 622 c, and can be regarded as another guide segment ofthe semiconductor element 600. The center tap of the semiconductorelement 600 may extend towards the right-hand side of the figure,partially overlapping a region surrounded by the spiral coil 620. Inanother embodiment, the center tap may extend towards the left-hand sideof the figure, partially overlapping a region surrounded by the spiralcoil 610.

The spiral coils 610 and 620 are both three-turn spiral structures. Theends 612 c and 612 d are located at the innermost turn of the spiralcoil 610, and the ends 622 a and 622 b are located at the innermost turnof the spiral coil 620. The connecting section of the semiconductorelement 600 connects the innermost turn of the spiral coil 610 and theinnermost turn of the spiral coil 620, and partially overlaps a regionsurrounded by the spiral coil 620. The guide segment section and thespiral coil 610 of the semiconductor element 600 are substantiallylocated in the same metal layer.

FIG. 7A shows a structure of a semiconductor element 700 according toanother embodiment of the present invention. The semiconductor element700 is substantially made up of multiple coils fabricated in twodifferent metal layers. FIGS. 7B and 7C show the structures of the partsof the semiconductor element 700. FIG. 7B shows the coils of thesemiconductor element 700 which are located in the lower metal layer andinclude a coil 710 and a coil 720. The two coils are located atsubstantially the same plane of a semiconductor structure and areconnected by a connecting section 730. Similar to the connecting section230, the connecting section 730 is formed by two connecting segments,and the detailed description is thus omitted herein for brevity. Thecoil 710 includes metal segments 711 a and 711 b. An end 712 c is one ofthe ends of the metal segment 711 a, and the other end of the metalsegment 711 a is connected to the connecting section 730. An end 712 dis one of the ends of the metal segment 711 b, and the other end of themetal segment 711 b is connected to the connecting section 730. The coil720 includes metal segments 721 a and 721 b. An end 722 a is one of theends of the metal segment 721 a, and the other end of the metal segment721 a is connected to the connecting section 730. An end 722 b is one ofthe ends of the metal segment 721 b, and the other end of the metalsegment 721 b is connected to the connecting section 730.

FIG. 7C shows coils of the semiconductor element 700 which are locatedin the upper metal layer and include a coil 715 and a coil 725. The twocoils are located in the same plane of a semiconductor structure, whichis different from the plane where the coil 710 and the coil 720 arelocated. The coil 715 and the coil 725 are not directly connected. Thecoil 715 includes metal segments 716 a and 716 b. The metal segment 716a is formed with two ends 717 a and 717 c. The end 717 c is connected tothe end 712 c of the coil 710 by a through structure, and the end 717 aand the metal segment 750 a are directly connected (as shown in FIG.7A). The metal segment 716 b is formed with two ends 717 b and 717 d.The end 717 d is connected to the end 712 d of the coil 710 by a throughstructure, and the end 717 b and the metal segment 750 b are directlyconnected (as shown in 7A). The metal segments 750 a and 750 b and theirrespective extended metal segments 750 a-1 and 750 b-1, which arefabricated in a third metal layer (in black color), form a guide segmentsection of the semiconductor element 700. The coil 725 includes metalsegments 726 a and 726 b. The metal segment 726 a is formed with an end727 a. The end 727 a and the end 722 a of the coil 720 are connected bya through structure. The metal segment 726 b is formed with an end 727b. The end 722 b of the coil 720 and the end 727 b are connected by athrough structure. In one embodiment, the metal segments 726 a and 726 bmay be regarded as a single metal segment, which uses ends 727 a and 727b as two ends thereof. In this embodiment, the metal segments 726 a and726 b are regarded as two distinct metal segments, and are connectedthrough the connecting area 727 c. The connecting area 727 c isconnected to a center tap of the semiconductor element 700 by a throughstructure. As shown in FIG. 7A, the center tap of the semiconductorelement 700 is formed by the metal segments 740 and 740-1.

As shown in FIG. 7A, the metal segments of the coil 710 and the metalsegments of the coil 715 substantially overlap; the metal segments ofthe coil 720 and the metal segments of the coil 725 substantiallyoverlap. The guide segment section of the semiconductor element 700partially overlaps the regions surrounded by the coil 710 and the coil715. The center tap of the semiconductor element 700 partially overlapsthe regions surrounded by the coil 720 and the coil 725.

Each of the aforementioned semiconductor elements 200, 300, 400, 500,600 and 700 can be used as integrated inductors, more specifically,8-shaped integrated inductors. Taking the semiconductor element 200 asan example, the semiconductor element 200 includes two sensing units;one sensing unit uses the metal segment 250 a (equivalent to the end 212a) and the center tap 240 (equivalent to the connecting area 222 c) astwo ends thereof, and the other uses the metal segment 250 b (equivalentto the end 212 b) and the center tap 240 (equivalent to the connectingarea 222) as two ends thereof. For the sensing unit that includes themetal segment 250 a, the electric current flows into the semiconductorelement 200 via the metal segment 250 a, and passes one half of thespiral coil 210 before entering the spiral coil 220 via the connectingsection 230. The electric current continues flowing through one half ofthe spiral coil 220 before exiting the semiconductor element 200 throughthe center tap 240. For the sensing unit that includes the metal segment250 b, the electric current flows into the semiconductor element 200 viathe metal segment 250 b, and passes the other half of the spiral coil210 before entering the spiral coil 220 via the connecting section 230.The electric current continues flowing through the other half of thespiral coil 220 before exiting the semiconductor element 200 through thecenter tap 240. Since the two sensing units have metal segments withsubstantially the same length, and have the same distribution of metalsegments in each metal layer, the semiconductor element 200 is ofexcellent symmetry. In comparison with the prior art, the 8-shapedintegrated inductor of the present invention is more symmetric. In fact,the end 212 a and the end 212 b can be regarded as one of the input portand the output port of the integrated inductor, whereas the connectingarea 222 c can be regarded as the other. The connecting areas 222 c,322, 422 c, 512 e, 622 c and 727 c are connecting points of the centertap of the integrated inductor. In fact, metal segments in those regionsare continuous without breaking. The metal segment 250 a and the metalsegment 250 b may be fabricated in a re-distribution layer (RDL).

The aforementioned semiconductor elements 200, 300, 400, 500, 600 and700 can also be used as integrated transformers. When used as anintegrated transformer, taking the semiconductor element 200 as anexample, the spiral coil 220 of the semiconductor element 200 can bebroken into two ends at the connecting area 222 c. The integratedtransformer uses the end 212 a and the end 212 b as one of the inputport and the output port, and uses the two ends derived from theconnecting area 222 c as the other. The impedance matching effect orvoltage magnification of the integrated transformer can be adjusted byaltering the turns ratio of the spiral coil 210 and the spiral coil 220.

Most metal segments of the semiconductor element of the presentinvention can be fabricated in an ultra-thick metal (UTM) layer and theRDL of a semiconductor structure. Taking the semiconductor element 200in FIG. 2B as an example, most metal segments of the spiral coils 210and 220 can be fabricated in the UTM layer (shaded in gray), and a smallportion of the metal segments is fabricated in the RDL (shaded byslanted lines). In a different embodiment, most metal segments of thespiral coils 210 and 220 can be fabricated in the RDL, while a smallportion of the metal segments is fabricated in the UTM layer. The centertap of a semiconductor element (e.g., the center tap 240 of FIG. 2A) isfabricated in another metal layer between a substrate and the UTM layerof a semiconductor structure. In a semiconductor structure, there may bea dielectric layer, such as silicon dioxide, between two metal layers.

Please note that the shape, turns ratio, size, and ratio of any elementin the disclosed figures are exemplary for understanding, not forlimiting the scope of this invention. In addition, although thedisclosed embodiments exemplarily demonstrate the applications of thesemiconductor elements by applying them to an integrated inductor or anintegrated transformer, people having ordinary skill in the art canapply the semiconductor elements to other electronic components.

The aforementioned descriptions represent merely the preferredembodiments of the present invention, without any intention to limit thescope of the present invention thereto. Various equivalent changes,alterations, or modifications based on the claims of the presentinvention are all consequently viewed as being embraced by the scope ofthe present invention.

What is claimed is:
 1. A semiconductor element, comprising: a firstspiral coil formed with a first end and a second end and comprising afirst outer turn and a first inner turn that is located in a regionsurrounded by said first outer turn; a second spiral coil, wherein saidsecond spiral coil and said first spiral coil are located insubstantially a same metal layer, and said second spiral comprises asecond outer turn and a second inner turn that is located in a regionsurrounded by said second outer turn; a connecting section, connectingsaid first spiral coil and said second spiral coil; and a guide segmentsection, with one end connected to said first end and said second end;wherein, a region surrounded by said second spiral coil and at least oneof said guide segment section and said connecting section partiallyoverlap; wherein, said connecting section and a region surrounded bysaid second spiral coil partially overlap, and said connecting sectionconnects said first inner turn and said second inner turn.
 2. Thesemiconductor element of claim 1, wherein said first spiral coilcomprises: an outer turn; and an inner turn, located in a regionsurrounded by said outer turn; wherein, said guide segment section and aregion surrounded by said second spiral coil partially overlap, and saidfirst end and said second end are located at said inner turn.
 3. Thesemiconductor element of claim 2, wherein said guide segment sectionfurther partially overlaps a region surrounded by said first spiralcoil.
 4. The semiconductor element of claim 1, wherein said first spiralcoil comprises: a first outer turn; and a first inner turn, located in aregion surrounded by said first outer turn; and said second spiral coilcomprises: a second outer turn; and a second inner turn, located in aregion surrounded by said second outer turn; wherein, said connectingsection and a region surrounded by said second spiral coil partiallyoverlap, and said connecting section connects said first outer turn andsaid second outer turn.
 5. The semiconductor element of claim 4, whereinsaid guide segment section further partially overlaps a regionsurrounded by said first spiral coil.
 6. The semiconductor element ofclaim 4, wherein said guide segment section and a region surrounded bysaid first inner turn do not overlap.
 7. The semiconductor element ofclaim 1, wherein said guide segment section further partially overlaps aregion surrounded by said first spiral coil.
 8. The semiconductorelement of claim 1, wherein said guide segment section and a regionsurrounded by said first inner turn do not overlap.
 9. The semiconductorelement of claim 1, wherein said first end and said second end arelocated at said first outer turn.